K10

15 Amp General Purpose Miniature Relay

15AmpGeneralPurposeMiniatureRelay Usersshouldthoroughlyreviewthetechnicaldatabeforeselectingaproductpartnumber.Itisrecommendedthatusersalsoseekoutthepertinentapprovalsfilesoftheagencies/laboratoriesandreviewthemtoensuretheproductmeetstherequirementsfora

K10

Socket, PCB and top flange mounting options

K100

K100 Pro Indicator Beacon – DC

•Industrialbeaconprovidingbright,configurableindicationforOEMsandusersthatneedvisiblestatus information •Ruggedconstructionprovidesyearsofuninterruptedoperation •Uniquewater-shedbeacondesignhelpsprotecttheindicator •Fourteencolorsinonedevice •Programmableus

K100

K100 Pro Daylight Visible Beacon – DC

•Highlyvisibleindicatorprovidesbright,evenlightindirectsunlight •Threecolorsinonedevice •ProgrammableusingBanner'sProEditorsoftwareandProConverterCable •36mmthreadedpolycarbonatebase •RuggedIP66,ULType4Xhousing •PNPorNPNoperationdependingonwiring •

K100

Platform Control System for rough terrain scissor lift

MainFeatures Directioncontrolswitchesintegratedinthejoystickgrip LCDDisplayforaneasysettingandcontrol EmergencyStopPushbutton AutomotivegradeMCU SupportCANbus SupportAnalogcurrent&AnalogvoltagemultiplexInput

K1006

N-CHANNEL SILICON POWER MOSFET

Features ●HighSpeedSwitching ●Lowon-resistance ●NoSecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalance-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

K100F

2,500 V - 10,000 V Rectifiers 1.5 A - 3.0 A Forward Current 200 ns Recovery Time

2,500V-10,000VRectifiers 1.5A-3.0AForwardCurrent 200nsRecoveryTime AXIALLEADEDEPOXYMOLDED

K100F

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K100F

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K100S

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K100S

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K100UF

Spice Model

HighVoltageDiodes-EpoxyMolded 1.5A-3.0A•100ns•AxialLeaded

K100UF

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K100UF

High Voltage Rectifiers 2,500V-10,000V

HighVoltageRectifiers 2,500V-10,000V 1.5A-3.0A•100ns-300ns AxialLeaded-EpoxyMolded

K101

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler TheK101hasonechannelina4-pinmini-flatSMDpackage. TheK102hastwochannelsina8-pinmini-flatSMDpackage. TheK104hasfourchannelsina16-pinmini-flatSMDpackage. ThesePhotocouplersconsistofaGalliumArsenideInfraredEmitting DiodeandaSilicon

K1010

High Reliability Photo Coupler

Features 1.Currenttransferratio(CTR：Min.50atIF=5mAVCE=5V) 2.Highisolationvoltagebetweeninputandoutput(Viso：5000Vrms) 3.Compactdual-in-linepackage. 4.PbfreeandRoHScompliant. 5.AgencyApprovals •ULUL1577/CULC22.2No.1&NTCNo.5,FileNo.E1695

K102

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler TheK101hasonechannelina4-pinmini-flatSMDpackage. TheK102hastwochannelsina8-pinmini-flatSMDpackage. TheK104hasfourchannelsina16-pinmini-flatSMDpackage. ThesePhotocouplersconsistofaGalliumArsenideInfraredEmitting DiodeandaSilicon

K102P

Optically Coupled Isolator

[TELEFUNKENelectronic] Construction:Emitter:GaAsIREmittingDiode Detector:SiliconNPNEpitaxialPlanarPhototransistor Applications:Gaivanicallyseparatedcircuits,non-interactionswitches Features: ●DCisolationtestvoltageVis4.4kV ●Lowcouplingcapacit

K102P1

Optically Coupled Isolator

[TELEFUNKENelectronic] Construction:Emitter:GaAsIREmittingDiode Detector:SiliconNPNEpitaxialPlanarPhototransistor Applications:Gaivanicallyseparatedcircuits,non-interactionswitches Features: ●DCisolationtestvoltageVis4.4kV ●Lowcouplingcapacit

K102P2

Optically Coupled Isolator

[TELEFUNKENelectronic] Construction:Emitter:GaAsIREmittingDiode Detector:SiliconNPNEpitaxialPlanarPhototransistor Applications:Gaivanicallyseparatedcircuits,non-interactionswitches Features: ●DCisolationtestvoltageVis4.4kV ●Lowcouplingcapacit