TK155E65Z

Marking：K155E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK155U60Z1

Marking：K155U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TK15A60U

Marking：K15A60U；Package：SC-67；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.24Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TK165A65Z5

Marking：K165A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.127Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.7

TK165E65Z5

Marking：K165E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.127Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.73mA

TK165U65Z5

Marking：K165U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.127Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.7

TK16A60W5

Marking：K16A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.18Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS=

TK16E60W5

Marking：K16E60W5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.18Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK16J60W5

Marking：K16J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.18Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK16N60W5

Marking：K16N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.18Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=