TK110A10PL

Marking：K110A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.3nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.1mΩ(typ.)(VGS=10V

TK110A65Z

Marking：K110A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TK110E10PL

Marking：K110E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.3nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.0mΩ(typ.)(VGS=10V

TK110E65Z

Marking：K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TK110N65Z

Marking：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TK110Z65Z

Marking：K110Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TK115A65Z5

Marking：K115A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.088Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.0

TK115E65Z5

Marking：K115E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.088Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.02mA

TK115N65Z5

Marking：K115N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.088Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.0

TK115U65Z5

Marking：K115U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.088Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.0