IKW15N120CS7

Marking：K15MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Shortcircuitrugged1200VTRENCHSTOP™IGBT7technologycopackedwithsoftandfastrecoveryEmitterControlled7diode Features •VCE=1200V •IC=15A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCE(sat)=2.0VatTvj=175°C •Optimizedforhard

IKWH100N65EH7

Marking：K100EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=100A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKY100N120CH7

Marking：K100MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=100A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packed

IKY120N65EH7

Marking：K120EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=120A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKY140N120CH7

Marking：K140MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=140A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighs

IKY150N65EH7

Marking：K150EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=150A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

K1050SA

Marking：K10S；Package：SMA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1050SB

Marking：K10S；Package：DO-214AA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1050SD1

Marking：K10S；Package：SOD-123FL；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1200SA

Marking：K12S；Package：SMA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors