IKD10N60RC2

Marking：K10DRC2；Package：PG-TO252-3；TRENCHSTOPTM RC-Series for hard switching applications Cost effective monolithically integrated IGBT with Diode

Features: TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •Verytightparameterdistribution •Operatingrangeupto20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof3μs •Humidityrobustdesign •Pb-freeleadplating;RoHScompliant

IKN01N60RC2

Marking：K1DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features •VCE=600V •IC=1A •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature150°C •Shortcircuitcapabilityof3μs •Humidityrobustdesign •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels:htt

IKQ100N120CH7

Marking：K100MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=100A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packed

IKQ100N120CS7

Marking：K100MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=1200V •IC=100A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) •Shortcircuitruggedness8μs •Widerangeofdv/dtcontroll

IKQ120N120CH7

Marking：K120MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=120A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighs

IKQ120N120CS7

Marking：K120MCS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=1200V •IC=120A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) •Shortcircuitruggedness8μs •Widerangeofdv/dtcontroll

IKQ120N65EH7

Marking：K120EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=120A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKQ150N65EH7

Marking：K150EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=150A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKQB120N75CP2

Marking：K120GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features •VCE=750V •IC=120A •LowsaturationvoltageVCEsat=1.4V •Lowswitchinglosses •Shortcircuitruggedness3μs •IGBTco-packedwithfullcurrent,softandfastrecoverydiode •Optimizedforhardswitchingtopologiesupto10KHz •Packagebacksidesuitableforreflow

IKQB160N75CP2

Marking：K160GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features •VCE=750V •IC=160A •LowsaturationvoltageVCEsat=1.4V •Lowswitchinglosses •Shortcircuitruggedness3μs •IGBTco-packedwithfullcurrent,softandfastrecoverydiode •Optimizedforhardswitchingtopologiesupto10KHz •Packagebacksidesuitableforreflow