丝印：K06T60；Package：PG-TO220-3；IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Features  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V

文件：519.94 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：K063N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：620.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K063Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：644.14 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：414.12 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：492.89 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：413.84 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K068N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.6

文件：499.2 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K068U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.6

文件：510.66 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K06EET6；Package：PG-TO252-3；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

文件：3.09767 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：K06T60；Package：PG-TO220-3；IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：520.58 Kbytes 页数：13 Pages

Infineon

英飞凌