IXFH52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche

IXFK52N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche

IXFT52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche

IXFV52N30P

PowerMOSFETs

IXFV52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFV52N30PS

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFV52N30PS

PowerMOSFETs

IXTQ52N30P

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=300V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) •FastSwitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switch-ModeandResonant-ModePowerS

IXTQ52N30P

N-ChannelEnhancementModePowerMOSFETs