PolarHT Power MOSFET

Polar™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • Switch-Mode and Resonant-Mode Power Suppli

文件：588.11 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 300V(Min) • Static Drain-Source On-Resistance : RDS(on) = 66mΩ (Max) • Fast Switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switch-Mode and Resonant-Mode Power S

文件：301.02 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFETs

文件：146.19 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

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力特