High Voltage MOSFET

N-Channel Enhancement Mode Avalanche Energy Rated Features ● International standard packages ● High voltage, Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Fast switching times Applications ● Switch-mode and resonant-mode power supplies ● Flyback inverters ● DC cho

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IXYS

艾赛斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

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IXYS

艾赛斯

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

文件：78.02 Kbytes 页数：3 Pages

Microsemi

美高森美

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

文件：225.38 Kbytes 页数：3 Pages

Microsemi

美高森美