首页 >IXTN30N100L其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-TypeFixedAttenuator | MINI Mini-Circuits | MINI | ||
LowLossIGBT:IGBTinTrenchStopandFieldstoptechnology LowLossIGBT:IGBTinTrenchStop®andFieldstoptechnology TrenchStop®andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat Designedf | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ReverseConductingIGBTwithmonolithicbodydiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=450mΩ(Max)@VGS=20V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·TemperatureandLightingControls | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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