IXTH12N100A规格书原装现货无锡固电IXYS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
DAM12N100D	文件：231.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM12N100S	文件：238.98 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
IXFH12N100	文件：372.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N100	文件：82.12 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N100F	文件：99.7 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •Ruggedpolysilicongatecellstructure •	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N100F	文件：372.12 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N100P	文件：371.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N100P	文件：181.15 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFETs PolarTMHiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •LowRDS(on)andQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switc	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N100Q	文件：372.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N100	文件：82.12 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N100	文件：317.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR12N100	文件：309 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR12N100F	文件：91.92 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFETsISOPLUS247™F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSw	IXYS IXYS Integrated Circuits Division	IXYS
IXFR12N100Q	文件：160.52 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247QCLASS HiPerFET™PowerMOSFETsISOPLUS247™QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Integrated Circuits Division	IXYS
IXFR12N100Q	文件：33.66 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances HiPerFET™PowerMOSFETsISOPLUS247™QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Integrated Circuits Division	IXYS
IXFT12N100	文件：556.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackage •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •FastintrinsicRectifier Applications •DC-DCconverters •Synchronou	IXYS IXYS Integrated Circuits Division	IXYS
IXFT12N100F	文件：99.7 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •Ruggedpolysilicongatecellstructure •	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	IXTH12N100A	IXYS	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	IXTH12N100A	IXYS	23+	TO-247	2000	进口原装现货假一罚十.价格优势.热卖中..	询价
深圳市惊羽科技有限公司	IXTH12N100A	IXYS-艾赛斯	24+25+/26+27+	车规-模块MODULE	1880	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市一线半导体有限公司	IXTH12N100L	IXYS	08+(pbfree)	TO-247	8866		询价
深圳市达恩科技有限公司	IXTH12N100L	IXYS	18+	NA	3356	进口原装正品优势供应QQ3171516190	询价
中天科工半导体（深圳）有限公司	IXTH12N100L	IXYS	20+	TO-247	36900	原装优势主营型号-可开原型号增税票	询价
深圳市艾宇欣科技有限公司	IXTH12N100L	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳兆威电子有限公司	IXTH12N100L	IXYS/艾赛斯	23+	TO-247	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市科雨电子有限公司	IXTH12N100L	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXTH12N100L	IXYS/艾赛斯	23+	TO-247	10000	公司只做原装正品	询价

更多IXTH12N100A供应商更新时间2024-6-23 19:07:00

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