Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Short Circuit SOA Capability

IGBT High Speed Short Circuit SOA Capability Features • International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount • Guaranteed Short Circuit SOA capability • High frequency IGBT • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conducti

文件：75.21 Kbytes 页数：4 Pages

IXYS

艾赛斯

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 250W TO247

IXYS

艾赛斯

KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.

文件：1.55858 Mbytes 页数：8 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

High speed switching

文件：576.12 Kbytes 页数：8 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Insulated Gate Bipolar Transistor (IGBT)

文件：187.89 Kbytes 页数：10 Pages

ONSEMI

安森美半导体