GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

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IXYS

艾赛斯

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.8V@IC=40A ·High Current Capability ·High Power Density ·Low Gate Drive Requirement APPLICATIONS ·Synchronous Rectification in SMPS ·Battey Chargers ·UPS,PFC ·Motor Drives

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ISC

无锡固电

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 660W TO247

IXYS

艾赛斯