isc N-Channel MOSFET Transistor

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：296.55 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.145Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·DC/DC Converters

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ISC

无锡固电

Preliminary Technical Information

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IXYS

艾赛斯