isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：175.18 Kbytes 页数：5 Pages

IXYS

艾赛斯

汽车级超-超级结X2-Class MOSFET

• 国际标准包装\n• 较低的RDS(ON)和QG\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated

文件：136.21 Kbytes 页数：5 Pages

IXYS

艾赛斯