HiPerFET??Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epox

文件：568.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.68 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) low Qg process • Rugged polysilicon gate cel

文件：90.21 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：362.81 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.55 Kbytes 页数：2 Pages

ISC

无锡固电