HiPerFET Power MOSFETs Q-Class

VDSS = 550 V ID25 = 26 A RDS(on) = 0.23 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Lo

文件：128.72 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs Q-Class

VDSS = 550 V ID25 = 26 A RDS(on) = 0.23 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Lo

文件：128.72 Kbytes 页数：2 Pages

IXYS

艾赛斯

TO-247

IXYS/艾赛斯

上传：深圳市佳杰伟业科技有限公司

IXYS

艾赛斯

上传：深圳市誉诚盛世科技有限公司