IXFH26N55Q

HiPerFET Power MOSFETs Q-Class

VDSS=550V ID25=26A RDS(on)=0.23Ω trr≤250ns N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Lowgatechargeandcapacitances -easiertodrive -fasterswitching Internationalstandardpackages Lo

IXFH26N55Q

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types\n;

IXFT26N55Q

HiPerFETPowerMOSFETsQ-Class

VDSS=550V ID25=26A RDS(on)=0.23Ω trr≤250ns N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Lowgatechargeandcapacitances -easiertodrive -fasterswitching Internationalstandardpackages Lo

IXFH34N65X2

IXYS/艾赛斯
TO-247

IXYS/艾赛斯

IXFH46N65X2

IXYS