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IXFH26N55Q中文资料IXYS数据手册PDF规格书
IXFH26N55Q规格书详情
VDSS = 550 V
ID25 = 26 A
RDS(on) = 0.23 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt
Features
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low RDS (on)
Rated for unclamped Inductive load switching (UIS) rated
Molding epoxies meet UL 94 V-0 flammability classification
Advantages
Easy to mount
Space savings
High power density
产品属性
- 型号:
IXFH26N55Q
- 功能描述:
MOSFET 26 Amps 550V 0.23 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
TO-247 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IXYS |
22+ |
TO-3P |
4000 |
绝对全新原装现货 |
询价 | ||
IXYS |
21+ |
TO-247 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
IXYS/艾赛斯 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IXYS |
23+ |
TO-3P |
4000 |
专做原装正品,假一罚百! |
询价 | ||
IXYS |
24+ |
TO-247 |
1298 |
询价 | |||
IXYS |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
I |
22+ |
TO-247AD |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
IXYS |
2022+ |
TO-247-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS |
23+ |
TO-3P |
8000 |
只做原装现货 |
询价 |