128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

文件：595.89 Kbytes 页数：17 Pages

ISSI

矽成半导体

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

文件：595.89 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：133.5 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：133.5 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：429.78 Kbytes 页数：17 Pages

ISSI

矽成半导体