128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

文件：595.89 Kbytes 页数：17 Pages

ISSI

矽成半导体

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

文件：595.89 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：133.5 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r

文件：321.21 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：133.5 Kbytes 页数：19 Pages

ISSI

矽成半导体