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IS65WV51216EFBLL

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55B2A3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55B2LA3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55B3A3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55B3LA3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55BA3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55BLA3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS65WV51216EFBLL-55CTLA3

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

供应商型号品牌批号封装库存备注价格
ISSI
25+
BGA
4500
ISSI存储芯片在售
询价
ISSI
25+
TSOP32
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ISSI
22+
N/A
49671
询价
Isocom
24+
NA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ISOCOM
12+
DIPSOP
10300
原装现货
询价
ISOCOM
2026+
DIPSOP
65248
百分百原装现货 实单必成
询价
ISOCOM
25+
DIPSOP6
10000
全新原装正品支持含税
询价
UPI
23+
QFN
8650
受权代理!全新原装现货特价热卖!
询价
UPI
18+
QFN
85600
保证进口原装可开17%增值税发票
询价
更多IS65WV51216EFBLL供应商 更新时间2026-1-27 18:06:00