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型号	下载订购	功能描述	制造商上传企业	LOGO
IS65WV12816ALL	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL	文件：133.5 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：133.5 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL_V01	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70B2A	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70B2A1	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70B2A2	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70B2A3	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70BA	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70BA1	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816ALL-70BA2	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS65WV12816ALL
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS65WV12816ALL	ISSI	25+	BGA	4500	ISSI存储芯片在售	询价
深圳市卓越微芯电子有限公司	IS65WV12816ALL-70TA1	ISSI	25+	TSOP44	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市河锋鑫科技有限公司	IS65WV12816BLL55BLA3	ISSI Integrated Silicon Soluti	22+	48miniBGA (6x8)	9000	原厂渠道,现货配单	询价
深圳市斌腾达科技有限公司	IS65WV12816BLL-55BLA3	ISSI, Integrated Silicon Solut	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS65WV12816BLL-55BLA3	ISSI, Integrated Silicon Solut	24+	48-迷你型BGA(6x8)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS65WV12816BLL-55BLA3	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS65WV12816BLL-55BLA3	ISSI(美国芯成)	2447	miniBGA-48(6x8)	315000	480个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS65WV12816BLL-55BLA3	ISSI	25+	BGA-48	480	就找我吧!--邀您体验愉快问购元件!	询价
讯运(深圳/上海)电子有限公司	IS65WV12816BLL-55BLA3	ISSI(美国芯成)	2021+	miniBGA-48(6x8)	499		询价
贸泽芯城（深圳）电子科技有限公司	IS65WV12816BLL-55BLA3	ISSI	23+	BGA	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多IS65WV12816ALL供应商更新时间2026-2-9 16:36:00

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