256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL) • Fully static operation: no clock or refresh

文件：456.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：103.88 Kbytes 页数：13 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL) • Fully static operation: no clock or refresh

文件：456.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL) • Fully static operation: no clock or refresh

文件：456.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL) • Fully static operation: no clock or refresh

文件：456.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL) • Fully static operation: no clock or refresh

文件：456.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：103.88 Kbytes 页数：13 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：103.88 Kbytes 页数：13 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：103.88 Kbytes 页数：13 Pages

ISSI

矽成半导体

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体