32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体