512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

128K x 8 LOW POWER AND LOW Vcc

文件：132.23 Kbytes 页数：10 Pages

ICSI

128K x 8 LOW POWER AND LOW Vcc

文件：132.23 Kbytes 页数：10 Pages

ICSI

128K x 8 LOW POWER AND LOW Vcc

文件：132.23 Kbytes 页数：10 Pages

ICSI