32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

文件：341.83 Kbytes 页数：12 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体