128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件：423.72 Kbytes 页数：8 Pages

ICSI

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

文件：423.72 Kbytes 页数：8 Pages

ICSI

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

文件：528.95 Kbytes 页数：14 Pages

ISSI

矽成半导体

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

文件：528.95 Kbytes 页数：14 Pages

ISSI

矽成半导体

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

文件：528.95 Kbytes 页数：14 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体