128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

文件：313.16 Kbytes 页数：11 Pages

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128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体