128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

文件：75.26 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

文件：329.36 Kbytes 页数：11 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com

文件：527.2 Kbytes 页数：14 Pages

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com

文件：527.2 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体