IS62C256

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-45T

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-45TI

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-45U

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-45UI

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-45UI

32K x 8 LOW POWER CMOS STATIC RAM; • Access time: 45, 70 ns\n• Low active power: 200 mW (typical)\n• Low standby power\n   — 250 µW (typical) CMOS standby\n   — 28 mW (typical) TTL standby\n• Fully static operation: no clock or refresh required\n• TTL compatible inputs and outputs\n• Single 5V power supply;

DESCRIPTION\nThe ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology.\nWhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels.\nEasy memory expansion is provided by using an active LOW Chip Select (CS) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.\nThe IS62C256 is pin compatible with other 32K x 8 SRAMs in plastic SOP or TSOP (Type I) package.FEATURES\n• Access time: 45, 70 ns\n• Low active power: 200 mW (typical)\n• Low standby power\n   — 250 µW (typical) CMOS standby\n   — 28 mW (typical) TTL standby\n• Fully static operation: no clock or refresh required\n• TTL compatible inputs and outputs\n• Single 5V power supply

IS62C256-70T

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-70TI

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-70U

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM

IS62C256-70UI

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62C256isalowpower,32,768wordby8-bitCMOSstaticRAM.ItisfabricatedusingISSIshighperformance,lowpowerCMOStechnology. WhenCSisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownto250µW(typical)atCM