32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

文件：38 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION\nThe ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology.\nWhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS • Access time: 45, 70 ns\n• Low active power: 200 mW (typical)\n• Low standby power\n   — 250 µW (typical) CMOS standby\n   — 28 mW (typical) TTL standby\n• Fully static operation: no clock or refresh required\n• TTL compatible inputs and outputs\n• Single 5V power supply;

ISSI

矽成半导体

32K X 8 LOW POWER CMOS STATIC RAM

文件：123.68 Kbytes 页数：10 Pages

ICSI

32K X 8 LOW POWER CMOS STATIC RAM

文件：123.68 Kbytes 页数：10 Pages

ICSI

32K X 8 LOW POWER CMOS STATIC RAM

文件：123.68 Kbytes 页数：10 Pages

ICSI