512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low

文件：469.1 Kbytes 页数：15 Pages

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat

文件：523.94 Kbytes 页数：15 Pages

ISSI

矽成半导体

5V Low Power Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

Package：44-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc