IS61LF51218A中文资料下载原装现货ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LF51218A	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A	文件：549.43 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 文件：549.43 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5B2	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5B2I	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5B3	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5B3I	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5TQ	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-6.5TQI	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-7.5B2	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61LF51218A-7.5B2I	文件：206.94 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. FEATURES • Internal self-timed write cycle • Individual Byte Write Contr 文件：206.94 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61LF51218A
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市豪迈兴电子有限公司	IS61LF51218A-7.5TQI	ISSI	24+	QFP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市毅创腾电子科技有限公司	IS61LF51218A-6.5B3I	ISSI		BGA	2732	正品原装--自家现货-实单可谈	询价
齐创科技(上海,北京,青岛)有限公司	IS61LF51218A-7.5TQLI	ISSI	23+	TQFP100	5000	原装正品,假一罚十	询价
深圳市鹏和科技有限公司	IS61LF51218A-7.5TQLI	ISSI	24+	TQFP-100	5000	只做原装公司现货	询价
深圳市佳鑫美电子科技有限公司	IS61LF51218A75TQI	ISSI	25+	QFP	4500	原装正品!公司现货!欢迎来电!	询价
深圳市卓越微芯电子有限公司	IS61LF51218A-7.5B2I	ISSI	25+	PBGA(119)	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市赛尔通科技有限公司	IS61LF51218A-7.5TQLI	ISSI	23+	100-TQFP	65480		询价
深圳市英卓尔科技有限公司	IS61LF51218A-7.5TQLI	ISSI	20+	QFP	500	样品可出,优势库存欢迎实单	询价
瀚佳科技(深圳)有限公司	IS61LF51218A-7.5TQI	ISSI	24+	QFP	36520	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61LF51218A-7.5TQLI	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多IS61LF51218A供应商更新时间2025-12-22 15:42:00

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