IS61LV6416-10TL技术资料参数原装现货ISSI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IS61LV6416-10TL	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TL	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TLI	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TLI-TR	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TL-TR	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IC61LV6416-10B	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10BI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10K	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10KI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10T	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10TI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10B	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10BI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10BI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10BLI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10K	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10K	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10KI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10KI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司

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产品属性

产品编号：
IS61LV6416-10TL
制造商：
ISSI, Integrated Silicon Solution Inc
类别：
集成电路（IC） > 存储器
包装：
卷带（TR）
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
1Mb（64K x 16）
存储器接口：
并联
写周期时间 - 字，页：
10ns
电压 - 供电：
3.135V ~ 3.6V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
供应商器件封装：
44-TSOP II
描述：
IC SRAM 1MBIT PARALLEL 44TSOP II

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IS61LV6416-10TL	ISSI	11+	TSOP	2500	现货绝对正品有货	询价
中天科工半导体（深圳）有限公司	IS61LV6416-10TL	ISSI	23+	TSOP44	41918	ISSI原装存储芯片-诚信为本	询价
深圳市富芯乐电子科技有限公司	IS61LV6416-10TL	ISSI	23+	TSOP	27000	绝对全新原装现货特价销售,欢迎来电查询	询价
深圳市星佑电子有限公司	IS61LV6416-10TL	ISSI	2008	TSOP	4	厂家指定一级分销全新原装现货价	询价
深圳市正迈科技有限公司	IS61LV6416-10TL	ISSI	23+	SOP	20000	原装进口ICMCUSOCMOS等知名国内外品牌只做原装全	询价
深圳市恒创达实业有限公司	IS61LV6416-10TL	ISSI	17+	TSOP	6200	100%原装正品现货	询价
千层芯半导体(深圳)有限公司	IS61LV6416-10TL	ISSI	17+	TSOP-44	6800	100%原装进口现货,欢迎来电咨询	询价
深圳市欧特拉科技有限公司	IS61LV6416-10TL	ISSI	08+	TSSOP	86	以质为本,只做原装正品	询价
深圳市赛尔通科技有限公司	IS61LV6416-10TL	ISSI	23+	TSOP	8500		询价
深圳市恒意法电子有限公司	IS61LV6416-10TL	ISSI	21+	TSOP44	26982	专营原装正品现货,当天发货,可开发票!	询价

更多IS61LV6416-10TL供应商更新时间2024-4-28 11:04:00

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