1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

文件：574.9 Kbytes 页数：32 Pages

ISSI

矽成半导体

Fixed 2-bit burst for read and write operations

文件：940.84 Kbytes 页数：29 Pages

ISSI

矽成半导体

Fixed 2-bit burst for read and write operations

文件：940.84 Kbytes 页数：29 Pages

ISSI

矽成半导体

DDR-II, Common I/O, Separate I/O SRAM

·18Mb, 36Mb, and 72Mb densities available\n·x18 and x36 configurations available\n·Burst of 2 or Burst of 4\n·Commercial and Industrial Temperature support\n·333MHz speed for QUAD and DDR-II\n·550MHz speed for QUADP and DDR-IIP\n·ODT and QVLD features for QUADP and DDR-IIP\n·Long-term Support

ISSI

矽成半导体

DDR-II, Common I/O, Separate I/O SRAM

ISSI

矽成半导体

DDR-II, Common I/O, Separate I/O SRAM

ISSI

矽成半导体

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc

Package：165-LBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 36MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc