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CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

HARRIS corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPANJIT International Inc.

强茂強茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

Good-Ark

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSOSHIN

双信电机双信电机株式会社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,14A,RDS(ON)=7.8mΩ@VGS=10V. RDS(ON)=11.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEP3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEU3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEXPRESS-BW-N3060

COMExpressCompactSizeType6Module

AdlinkAdvance Technologies

AdlinkAdvance Technologies

CHM3060JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT14Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

CRO3060A

LOWCOST-HIGHPERFORMANCEVOLTAGECONTROLLEDOSCILLATOR

ZCOMM

Z-Communications, Inc

CRO3060A

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

CS3060CT-A

SuperLowBarrierHighVoltagePowerRectifier

供应商型号品牌批号封装库存备注价格
ISOCOM
DIP6
265209
假一罚十原包原标签常备现货!
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ISOCOM
24+23+
DIP6
12580
16年现货库存供应商终端BOM表可配单提供样品
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ISOCOM
2023+
DIP6
45000
原厂全新正品旗舰店优势现货
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ISOCOM
23+
NA/
48250
原装现货,当天可交货,原型号开票
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ISOCOM
23+
SMD6
50000
全新原装正品现货,支持订货
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ISOCOM
21+ROHS
SMD6
50000
原厂授权一级代理,专业海外优势订货,价格优势、品种
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ISOCOM
23+
DIP6
20000
原装正品 欢迎咨询
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SHARY
23+
DIP5
50
原装环保房间现货假一赔十
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SHARY
11+
DIP5
50
刚到现货加微13425146986
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SHARY
20+
DIP5
9850
只做原装正品假一赔十为客户做到零风险!!
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更多IS3060供应商 更新时间2024-6-17 16:18:00