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IS61LV12816-12T

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:88.69 Kbytes 页数:11 Pages

ISSI

矽成半导体

IS61LV12816-12T

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:59.28 Kbytes 页数:12 Pages

ISSI

矽成半导体

IS61LV12816-12T

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

文件:146.94 Kbytes 页数:11 Pages

ICSI

IS61LV12816-12TI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:88.69 Kbytes 页数:11 Pages

ISSI

矽成半导体

IS61LV12816-12TI

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

文件:146.94 Kbytes 页数:11 Pages

ICSI

IS61LV12816-12TI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:59.28 Kbytes 页数:12 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS61LV12816-12T

  • 制造商:

    ISSI

  • 制造商全称:

    Integrated Silicon Solution, Inc

  • 功能描述:

    128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

供应商型号品牌批号封装库存备注价格
ICSI
23+
6000
原装现货特价
询价
ICSI
2025+
TSOP
3783
全新原装、公司现货热卖
询价
ISSI
22+
TSOP44
19025
原装正品,实单请联系
询价
ISSI
2023+
TSOP
53500
正品,原装现货
询价
ISSI
23+
TSOP/44
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
INTEGRATEDSI
05+
原厂原装
4855
只做全新原装真实现货供应
询价
ISSI?
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
ISSI
25+
TSOP
9360
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
24+
SOP
135
原装现货假一罚十
询价
ISSI
24+
SOP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多IS61LV12816-12T供应商 更新时间2025-10-12 9:21:00