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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLZ34L	文件：347.15 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with a 文件：347.15 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRLZ34L	文件：363.43 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：363.43 Kbytes 页数：10 Pages	IRF	IRF
IRLZ34LPBF	文件：347.15 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with a 文件：347.15 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRLZ34N	文件：62.94 Kbytes Page：7 Pages	N-channel enhancement mode Logic level TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power 文件：62.94 Kbytes 页数：7 Pages	PHI 飞利浦	PHI
IRLZ34N	文件：114.06 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：114.06 Kbytes 页数：8 Pages	IRF	IRF
IRLZ34N	文件：338.61 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤35mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.61 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRLZ34NL	文件：190.64 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：190.64 Kbytes 页数：10 Pages	IRF	IRF
IRLZ34NLPBF	文件：297.98 Kbytes Page：11 Pages	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：297.98 Kbytes 页数：11 Pages	IRF	IRF
IRLZ34NPBF	文件：230.31 Kbytes Page：9 Pages	HEXFET Power MOSFET 文件：230.31 Kbytes 页数：9 Pages	IRF	IRF
IRLZ34NS	文件：190.64 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：190.64 Kbytes 页数：10 Pages	IRF	IRF

技术参数

OPN：
IRLZ34NPBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
55 V
RDS (on) @10V max：
35 mΩ
RDS (on) @4.5V max：
60 mΩ
ID @25°C max：
30 A
QG typ @4.5V：
16.7 nC
Polarity：
N
VGS(th) min：
1 V
VGS(th) max：
2 V
VGS(th)：
1.5 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IRLZ34	IR	24+	TO-220	40		询价
深圳市勤思达科技有限公司	IRLZ34	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市星佑电子有限公司	IRLZ34	INTERNATIONA	05+	原厂原装	4345	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	IRLZ34	IR	24+	TO-220	1068	原装现货假一罚十	询价
深圳市华斯顿科技有限公司	IRLZ34	IR	25+23+	New	33088	绝对原装正品现货,全新深圳原装进口现货	询价
中天科工半导体（深圳）有限公司	IRLZ34	IR	20+	TO-220	36900	原装优势主营型号-可开原型号增税票	询价
深圳市科雨电子有限公司	IRLZ34	VISHAY	25+	TO-220	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	IRLZ34	IR	23+	TO-220	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRLZ34	IR	21+	TO-220	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRLZ34	Vishay Siliconix	22+	TO2203	9000	原厂渠道,现货配单	询价

更多IRLZ34供应商更新时间2025-12-13 16:30:00

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