IRLU3105说明书PDF资料贸易商无锡固电IRF-114ic电子网

首页 >IRLU3105>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRLU3105	文件：169.12 Kbytes Page：8 Pages	AUTOMOTIVE MOSFET 文件：169.12 Kbytes 页数：8 Pages	IRF	IRF
IRLU3105	文件：246.99 Kbytes Page：2 Pages	丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor 文件：246.99 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRLU3105PBF	文件：308.56 Kbytes Page：11 Pages	AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com 文件：308.56 Kbytes 页数：11 Pages	IRF	IRF
IRLU3105PBF	文件：327.71 Kbytes Page：11 Pages	Logic-Level Gate Drive Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com 文件：327.71 Kbytes 页数：11 Pages	IRF	IRF

更多IRLU3105供应商更新时间2025-12-1 17:03:00