HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and impr

文件：581.67 Kbytes 页数：11 Pages

IRF

丝印：DPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：246.78 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：1.443 Mbytes 页数：11 Pages

KERSEMI

采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features co

文件：310.4 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：328.56 Kbytes 页数：11 Pages

IRF