| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRLZ14 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：1.03239 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14 | Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：262.66 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14 | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：291.75 Kbytes 页数：10 Pages | IRF | IRF | |
IRLZ14 | Power MOSFET 文件：1.16541 Mbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14 | Power MOSFET 文件：1.08982 Mbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14 | Power MOSFET 文件：1.08982 Mbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：262.66 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：291.75 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：294.4 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：1.03239 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
IRLZ14
- 功能描述：
MOSFET N-Chan 60V 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
原装 |
32360 |
IR全新特价IRLZ14即刻询购立享优惠#长期有货 |
询价 | ||
IR |
24+/25+ |
75 |
原装正品现货库存价优 |
询价 | |||
IR |
23+ |
NA |
1978 |
专做原装正品,假一罚百! |
询价 | ||
IR |
23+ |
65480 |
询价 | ||||
IR |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |
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