Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.12Ω ID = 13 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.)

文件：268.3 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：344.92 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 1200/1600V • VDRM Repetitive peak off-state voltage 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

文件：59.18 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP

文件：66.62 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • IF (AV) Average forward current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • MIX DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E802

文件：70.7 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机