首页 >IRLR014NPBF其他被动元件>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Fieldreplaceablebearingsandelectronics | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AluminumorLexancupsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
EFD20HIGHFREQUENCYPoETRANSFORMER | ALLIED Allied Components International | ALLIED | ||
Implement3.3VdualusingAIC1730 | AIC AIC | AIC | ||
PolySwitchResettableDevices | MACOM Tyco Electronics | MACOM | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
TO-252 |
货真价实,假一罚十 |
25000 |
询价 | |||
IR |
22+ |
TO-252 |
40256 |
本公司只做原装进口现货 |
询价 | ||
IR |
22+/23+ |
TO-252 |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
IR |
16+ |
SOT-252 |
50000 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
DPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
20+ |
TO-252 |
90000 |
全新原装正品/库存充足 |
询价 | ||
Infineon Technologies |
21+ |
D-Pak |
2000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
21+ |
SOT-252 |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 |
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