Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ● Lower RDS(ON) : 1.185 Ω (Typ.)

文件：270.09 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ● Lower RDS(ON) : 1.185 Ω (Typ.)

文件：270.09 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：320.97 Kbytes 页数：2 Pages

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N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.3737 Mbytes 页数：5 Pages

Bychip

百域芯

Advanced Power MOSFET

文件：234.09 Kbytes 页数：7 Pages

Fairchild

仙童半导体