INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 1200V VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

文件：132.39 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 μs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package • Lead-Free Bene

文件：174.28 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：297.03 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：297.03 Kbytes 页数：13 Pages

IRF

1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

1200V IGBT 与超快 5-40 kHz 软恢复二极管联合封装到 TO-247AD 封装中。 • 低 VCE(on) 非穿通型(NPT) 技术\n• 低二极管 VF（1.76V 典型 @ 25A & 25°C）\n• 10 μS 短路能力\n• 方形 RBSOA\n• 超软二极管恢复特性\n• 正 VCE(on) 温度系数\n• 无铅\n\n优势:\n• 电机控制应用基准效率\n• 强健的瞬态性能\n• 低 EMI\n• 对缓冲的需求显著降低\n• 并联工作时电流共享表现出色\n• 引脚更长，安装更方便;

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 60A 300W TO247AD

Infineon

英飞凌