IRGB8B60KPBF规格书应用电路原装现货英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRGB8B60KPBF	文件：450.29 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing 文件：450.29 Kbytes 页数：13 Pages	IRF	IRF
IRGB8B60KPBF	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：卷带（TR）类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 28A 167W TO220AB	Infineon 英飞凌	Infineon
IRGS8B60K	文件：468.97 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：468.97 Kbytes 页数：13 Pages	IRF	IRF
IRGS8B60KPBF	文件：450.29 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing 文件：450.29 Kbytes 页数：13 Pages	IRF	IRF
IRGS8B60KPBF	文件：531.06 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：531.06 Kbytes 页数：13 Pages	IRF	IRF

更多IRGB8B60KPBF供应商更新时间2025-12-24 8:31:00