IRG4PC50KPBF

ShortCircuitRatedUltraFastIGBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50S

FitRate/EquivalentDeviceHours

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

•Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50U

FitRate/EquivalentDeviceHours

IRG4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan

IRG4PC50UD

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters