IRG4BC10KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4BC10KD

600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; • 对电机控制的高短路额定值优化，tsc =10µs, @360V VCE（启动），TJ=125°C, VGE=15V\n• 低通态损耗与高开关速度相结合\n• 相较于前代，参数分布更紧凑，效率更高\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT\n• 无铅\n\n优势:\n• 4 IGBT 提供可行的高功率密度电机控制\n• HEXFREDTM 二极管经过与 IGBT 并用优化，将噪声、EMI 和开关损耗降至最低\n;

600V IGBT 与超快 8-25 kHz 软恢复二极管联合封装到 TO-220AB 封装中\n

IRG4BC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4BC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw

IRG4BC10KDPBF

High short circuit rating optimized for motor control

IRG4BC10KDPBF_15

High short circuit rating optimized for motor control

IRG4BC10KDPBF

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 9A 38W TO220AB