IRFS634A规格书应用电路供应价格无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFS634A	文件：344.44 Kbytes Page：6 Pages	Advanced Power MOSEFT 文件：344.44 Kbytes 页数：6 Pages	Samsung 三星	Samsung
IRFS634A	文件：59.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：59.01 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFS634A	文件：300 bytes Page：1 Pages	Advanced Power MOSEFT	Samsung 三星	Samsung
IRFS634B	文件：859.54 Kbytes Page：10 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：859.54 Kbytes 页数：10 Pages	Fairchild 仙童半导体	Fairchild
IRFS634B	文件：896.45 Kbytes Page：9 Pages	250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：896.45 Kbytes 页数：9 Pages	KERSEMI	KERSEMI
IRFS634B	文件：265.23 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：265.23 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IRFS634A供应商更新时间2025-12-1 19:10:00