isc N-Channel MOSFET Transistor

文件：58.99 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

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Fairchild

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：668.58 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

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IRF