200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

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IRF

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：2.20214 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司